Plasma Etch

Gasonics is a Registered Trademark of Novellus Corp.AE 2001 is a single wafer downstream isotropic etch system, designed to etch thin films such as poly silicon, silicon nitride and CVD oxides.Utilizing the proven Aura downstream microwave source and a dedicated reactor chamber, GaSonicsAE2001 offers high etch rates and no RF damage to the wafer. Featuring high reliability and flexibility in process parameter, GaSonics AE 2001 is the unparalleled tool of choice for multiple applications and high capital productivity. Gaonicsa AE2001 is an electro-mechanical production system used to etch materials such as nitride, oxide poly-silicon etc. from the surface of silicon or other substrate. Each wafer is processed individually by means a chemical reaction induced by a gas plasma.

+ Single Wafer, Multi-Step Processing
+ Closed-Loop Temperature Control
+ Pressure Control
+ Accurate, closed-loop pressure control with “butterfly-style” throttle valve and capacitance manometer
+ RF power: 100 to 500 watts
+ Timed cycles up to 4 hour each
+ No RF damage (£0.1 volt CV shift)
+ High throughput
+ Front and backside etching
+ Excellent etch rates and uniformities
+ 100mm – 150mm wafer capability
+ Variable platen temperature
+ Alumina (ceramic) plasma tube
+ Fluorine compatible chamber
+ Well-characterized process
+ Multiple step process capability
+ High capital productivity.